Plasmonic terahertz detectors for biodetectionPALA, N; SHUR, M. S.Electronics letters. 2008, Vol 44, Num 24, pp 1391-1393, issn 0013-5194, 3 p.Article

RF Transmission Line Method for Wide-Bandgap HeterostructuresKOUDYMOV, A; PALA, N; SIMIN, G et al.IEEE electron device letters. 2009, Vol 30, Num 5, pp 433-435, issn 0741-3106, 3 p.Article

Low frequency noise of light emitting diodesRUMYANTSEV, S. L; SAWYER, S; PALA, N et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 75-85, issn 0277-786X, isbn 0-8194-5839-2, 1Vol, 11 p.Conference Paper

Field controlled RF Graphene FETs with improved high frequency performanceAL-AMIN, C; KARABIYIK, M; VABBINA, P. K et al.Solid-state electronics. 2014, Vol 95, pp 36-41, issn 0038-1101, 6 p.Article

Concentration dependence of the 1/f noise in AlGaN/GaN heterostructure field effect transistorsRUMYANTSEV, S. L; PALA, N; SHUR, M. S et al.Semiconductor science and technology. 2002, Vol 17, Num 5, pp 476-479, issn 0268-1242Article

Low frequency noise in Al0.4Ga0.6N thin filmsPALA, N; RUMYANTSEV, S; GASKA, R et al.IEEE Lester Eastman conference on high performance devices. 2002, pp 164-171, isbn 0-7803-7478-9, 8 p.Conference Paper

Grating-gate tunable plasmon absorption in InP and GaN based HEMTsPEALE, R. E; SAXENA, H; BUCHWALD, W. R et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7467, issn 0277-786X, isbn 978-0-8194-7757-6 0-8194-7757-5, 1Vol, 74670Q.1-74670Q.8Conference Paper

HfO2/AlGaN/GaN structures with HfO2 deposited at ultra low pressure using an e-beamTOKRANOV, V; RUMYANTSEV, S. L; SHUR, M. S et al.Physica status solidi. Rapid research letters (Print). 2007, Vol 1, Num 5, pp 199-201, issn 1862-6254, 3 p.Article

Resonant terahertz absorption by plasmons in grating-gate GaN HEMT structuresMURAVJOV, A. V; VEKSLER, D. B; HU, X et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7311, issn 0277-786X, isbn 978-0-8194-7577-0, 73110D.1-73110D.7Conference Paper

Drain-to-gate field engineering for improved frequency response of GaN-based HEMTsPALA, N; HU, X; DENG, J et al.Solid-state electronics. 2008, Vol 52, Num 8, pp 1217-1220, issn 0038-1101, 4 p.Article

Terahertz detection by GaN/AlGaN transistorsEL FATIMY, A; BOUBANGA TOMBET, S; HU, X et al.Electronics Letters. 2006, Vol 42, Num 23, pp 1342-1344, issn 0013-5194, 3 p.Article

Nonresonant detection of terahertz radiation by silicon-on-insulator MOSFETsPALA, N; TEPPE, F; VEKSLER, D et al.Electronics Letters. 2005, Vol 41, Num 7, pp 447-449, issn 0013-5194, 3 p.Article

Ultraviolet-sensitive AlGaN-based surface acoustic wave devicesCIPLYS, D; SHUR, M. S; PALA, N et al.IEEE Sensors conference. 2004, isbn 0-7803-8692-2, 3Vol, vol 3, 1345-1348Conference Paper